Datasheet4U Logo Datasheet4U.com

AGM12N10D - MOSFET

Datasheet Summary

Description

The AGM12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .

This device is ideal for load switch and battery protection applications.

Features

  • s.
  • Advance high cell density Trench technology BVDSS RDSON ID 100V 9.3mΩ 55A.
  • Low RDS(ON) to minimize conductive loss.
  • Low Gate Charge for fast switching TO-252 Pin Configuration.
  • Low Thermal resistance.
  • 100% Avalanche tested.
  • 100% DVDS tested.

📥 Download Datasheet

Datasheet preview – AGM12N10D

Datasheet Details

Part number AGM12N10D
Manufacturer AGMSEMI
File Size 1.49 MB
Description MOSFET
Datasheet download datasheet AGM12N10D Datasheet
Additional preview pages of the AGM12N10D datasheet.

📁 Similar Datasheet

Other Datasheets by AGMSEMI

Full PDF Text Transcription

Click to expand full text
AGM12N10D ● General Description The AGM12N10D combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) . Product Summary This device is ideal for load switch and battery protection applications. ● Features ■ Advance high cell density Trench technology BVDSS RDSON ID 100V 9.3mΩ 55A ■ Low RDS(ON) to minimize conductive loss ■ Low Gate Charge for fast switching TO-252 Pin Configuration ■ Low Thermal resistance ■ 100% Avalanche tested ■ 100% DVDS tested ● Application ■ MB/VGA Vcore ■ SMPS 2nd Synchronous Rectifier ■ POL application ■ BLDC Motor driver Package Marking and Ordering Information Device Marking AGM12N10D Device AGM12N10D Device Package TO-252 Reel Size 330mm Tape width 16mm Quantity 2500 Table 1.
Published: |