AGM12N10D Datasheet - AGMSEMI

AGM12N10D MOSFET

AGM12N10D Features

* Advance high cell density Trench technology BVDSS RDSON ID 100V 9.3mΩ 55A

* Low RDS(ON) to minimize conductive loss

* Low Gate Charge for fast switching TO-252 Pin Configuration

* Low Thermal resistance

* 100% Avalanche tested

* 100% DVDS tested

* Applicatio

Datasheet Details

AGM12N10D

AGMSEMI

1.49 MB

Mosfet.

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