Datasheet Details
- Part number
- AGM12N65F
- Manufacturer
- AGMSEMI
- File Size
- 557.93 KB
- Datasheet
- AGM12N65F-AGMSEMI.pdf
- Description
- MOSFET
AGM12N65F Description
AGM12N65F * General .
The AGM12N65F combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .
AGM12N65F Features
* BVDSS
RDSON
ID
650V
0.76Ω
12A
* Advance high cell density Trench technology
* Low RDS(ON) to minimize conductive loss
* Low Gate Charge for fast switching
TO-220F Pin Configuration
* Low Thermal resistance
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