AP100N03BD
Description
30V N-Channel Enhancement Mode MOSFET
The AP100N03BD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 30V ID =100A
RDS(ON) < 4.5mΩ @ VGS=10V（Type：3.5mΩ）
Application
Battery protection Load switch Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
TO-252-3L
Marking AP100N03BD XXX YYYY
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
VDS VGS ID@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
IDM EAS
Pulsed Drain Current2 Single Pulse Avalanche Energy3
IAS PD@TC=25℃
Avalanche Current Total Power Dissipation4
TSTG
Storage Temperature Range
Rating 30 ±20 100
380 110 45 52
-55 to 150
TJ RθJA...
