AP28N50F Datasheet - APM

AP28N50F 500V N-Channel Enhancement Mode MOSFET

The AP28N50F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hig.

AP28N50F Features

* VDS = 500V ID =28A RDS(ON) < 260mΩ @ VGS=10V （Type：195mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking AP28N50F TO-220F-3L AP28N50F XXX YYYY AP28N50P TO-220-3L AP28N50P XXX YYYY Absolute Maximu

AP28N50F-APM.pdf