HSCH-5314 - Beam Lead Schottky Diodes
These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction.
Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor.
A nitride passivation layer provides immunity from contaminant
HSCH-5314 Features
* Platinum tri-metal system High temperature stability
* Silicon nitride passivation Stable, reliable performance
* Low noise figure Guaranteed 7.5 dB at 26 GHz
* High uniformity Tightly controlled process insures uniform RF characteristics
* Rugged constructi
