HSCH-5314 Datasheet - AVAGO

HSCH-5314 Beam Lead Schottky Diodes

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminant.

HSCH-5314 Features

* Platinum tri-metal system High temperature stability

* Silicon nitride passivation Stable, reliable performance

* Low noise figure Guaranteed 7.5 dB at 26 GHz

* High uniformity Tightly controlled process insures uniform RF characteristics

* Rugged constructi

HSCH-5314-AVAGO.pdf