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HSCH-5330

Beam Lead Schottky Diodes

HSCH-5330 Features

* Platinum tri-metal system High temperature stability

* Silicon nitride passivation Stable, reliable performance

* Low noise figure Guaranteed 7.5 dB at 26 GHz

* High uniformity Tightly controlled process insures uniform RF characteristics

* Rugged constructi

HSCH-5330 General Description

These beam lead diodes are constructed using a metalsemiconductor Schottky barrier junction. Advanced epitaxial techniques and precise process control insure uniformity and repeatability of this planar passivated microwave semiconductor. A nitride passivation layer provides immunity from contaminant.

HSCH-5330 Datasheet (75.53 KB)

Preview of HSCH-5330 PDF

Datasheet Details

Part number:

HSCH-5330

Manufacturer:

AVAGO

File Size:

75.53 KB

Description:

Beam lead schottky diodes.

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TAGS

HSCH-5330 Beam Lead Schottky Diodes AVAGO

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