AM1030N Datasheet - AXElite

AM1030N 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Th.

AM1030N Features

* 3.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability PIN ASSIGNMENT The package of AM1030N is€ SOT-223; the pin assignment is given by: VÛmw`R

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AM1030N-AXElite.pdf