AM1010N - 100V N-Channel MOSFET

AXElite

Datasheet Details

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability  PIN.

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Published: Jul 17, 2014 |