AM1010N Datasheet (AXElite) - 100V N-Channel MOSFET

AM1010N, 100V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

AM1010N Features

* 1.0A, 100V, RDS(on) = 0.19Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching Improved dv/dt capability  PIN ASSIGNMENT The package of AM1010N is SOT-223; the pin assignment is given by: VÛmw`R

* yÑb€ w.goftechm 1/8 AM1010N  ORDER/MARKING INFORMATIO