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AP11N50I-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP11N50I-HF Description

AP11N50I-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ Ro.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP11N50I-HF Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 11 5.6 40 40 2 Units V V A

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Datasheet Details

Part number
AP11N50I-HF
Manufacturer
Advanced Power Electronics
File Size
91.04 KB
Datasheet
AP11N50I-HF-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP11N50I-HF-like datasheet