AP1001BSQ-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP1001BSQ-3 N-channel Enhancement-mode Power MOSFET Lead(Pb)-free, Halogen-free Low Conductance Losses Fast Switchi.
The AP1001BSQ-3 uses the latest APEC Power MOSFET silicon TM technology with advanced technology GreenFET packaging to provide the lowest on-resistanc.

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Datasheet Specifications

Part number: AP1001BSQ-3
Manufacturer: Advanced Power Electronics
File Size: 86.11 KB
Datasheet: AP1001BSQ-3-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* especially for high-frequency/high-efficiency DC-DC converters. GreenFETTM D G S D Absolute Maximum Ratings Symbol VDS VGS ID at TA=25°C ID at TA=100°C ID at TC=25°C IDM C PD at TA=25° PD at TA=70°C C PD at TC=25° EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous D

AP1001BSQ-3 Distributors

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AP1001BSQ-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP1001BSQ-3-like datasheet