AP1333GU-HF - P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low onresistance and cost-effectiveness.
D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain C
