AP15N03GI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP15N03GI RoHS-compliant Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requi.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP15N03GI
Manufacturer: Advanced Power Electronics
File Size: 89.73 KB
Datasheet: AP15N03GI-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* BVDSS RDS(ON) ID 30V 80mΩ 15A GD S TO-220CFM(I) Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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