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AP2306AGEN N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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Description

AP2306AGEN RoHS-compliant Product Advanced Power Electronics Corp.▼ Capable of 2.5V Gate Drive ▼ Small Outline Package ▼ Surface Mount Device S SOT-.
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectivenes.

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Datasheet Specifications

Part number
AP2306AGEN
Manufacturer
Advanced Power Electronics
File Size
119.50 KB
Datasheet
AP2306AGEN-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V Pulsed Drain Current 1 3 3 Rating 30 +6 4.1 3.3 16 1.38 -55 to 150 -55 to 150 Un

AP2306AGEN Distributors

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP2306AGEN-like datasheet