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AP2306AGN - N-channel enhancement mode power MOSFET

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Datasheet Details

Part number AP2306AGN
Manufacturer Advanced Power Electronics
File Size 102.06 KB
Description N-channel enhancement mode power MOSFET
Datasheet download datasheet AP2306AGN_AdvancedPowerElectronics.pdf

AP2306AGN Product details

Description

SOT-23 G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.The SOT-23 package is universally used for all commercial-industrial applications.D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage www.DataSheet4U.com Parameter Rating 30 ± 12 Units V V A A A W W/ ℃ ℃ ℃ Continuous Drain Current , VGS @ 4.5

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