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AP2306AGN-HF-3 N-channel enhancement mode power MOSFET

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Description

Advanced Power Electronics Corp.AP2306AGN-HF-3 N-channel Enhancement-mode Power MOSFET Supports 2.5V Gate Drive Lower On-resistance Surface-Mount D.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

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Applications

* where a small board footprint is required. This device is well suited for use in medium current applications such as load switches. D S SOT-23 G Absolute Maximum Ratings Symbol VDS VGS ID at T A =25°C ID at TA= 70°C IDM PD at TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Cont

AP2306AGN-HF-3 Distributors

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N-channel enhancement mode power MOSFET Advanced Power Electronics
Advanced Power Electronics AP2306AGN-HF-3-like datasheet