Part number:
AP30G120ASW
Manufacturer:
Advanced Power Electronics
File Size:
118.56 KB
Description:
N-channel insulated gate bipolar transistor.
AP30G120ASW_AdvancedPowerElectronics.pdf
Datasheet Details
AP30G120ASW Features
* ▼ High Speed Switching ▼ Low Saturation Voltage V CE(sat)=2.9V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD. VCES IC C G C E TO-3P G E Parameter Rating 1200 +30 60 30 120 6 40 208 -55 to 150 -55 to 150 300 1200V 30A Absolute Maximum Ratings
AP30G120ASW_AdvancedPowerElectronics.pdf
Datasheet Details
AP30G120ASW
Advanced Power Electronics
118.56 KB
N-channel insulated gate bipolar transistor.
📁 Related Datasheet
AP30G120ASW-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP30G120BSW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)
AP30G120CSW-HF N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)
AP30G120SW N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)
AP30G120W N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)
AP30G100W N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR (Advanced Power Electronics)
AP30G10GD 100V N+P-Channel Enhancement Mode MOSFET (APM)
AP30G04NF 40V N+P-Channel Enhancement Mode MOSFET (APM)
AP30G120ASW Distributor