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AP30G120SW - N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP30G120SW Description

Advanced Power Electronics Corp.AP30G120SW Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR WITH FRD..

AP30G120SW Features

* ▼ High Speed Switching ▼ Low Saturation Voltage VCES IC VCE(sat)=3.0V@IC=30A ▼ CO-PAK, IGBT With FRD ▼ RoHS Compliant & Halogen-Free G C E TO-3P G Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating VCES Collector-Emitter Voltage 1200 VGE Gate-Emitter V

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Datasheet Details

Part number
AP30G120SW
Manufacturer
Advanced Power Electronics
File Size
135.82 KB
Datasheet
AP30G120SW_AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics
Advanced Power Electronics AP30G120SW-like datasheet