AP30G40AEO N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

Advanced Power Electronics Corp.AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.3V ▼ Low Gate Drive ▼.

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Datasheet Specifications

Part number: AP30G40AEO
Manufacturer: Advanced Power Electronics
File Size: 57.14 KB
Datasheet: AP30G40AEO-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 130A C E Absolute Maximum Ratings Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage +6 ICP PD@TA=25oC1 Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation 130 1

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AP30G40AEO N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP30G40AEO-like datasheet