AP30G40AEO Datasheet - Advanced Power Electronics

AP30G40AEO N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP30G40AEO Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=130A @VGE=3.3V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 130A C E Absolute Maximum Ratings Symbol Parameter Rating VCE Collector-Emitter Voltage 400 VGEP Peak Gate-Emitter Voltage +6 ICP PD@TA=25oC1 Pulsed Collector Current, VGE @ 3.3V Maximum Power Dissipation 130 1 TSTG Storage Temperatu.

AP30G40AEO Datasheet (57.14 KB)

AP30G40AEO Datasheet Preview — Preview of AP30G40AEO PDF

Datasheet Details

Part number:

AP30G40AEO

Manufacturer:

Advanced Power Electronics

File Size:

57.14 KB

Description:

N-channel enhancement mode power mosfet.

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AP30G40AEO N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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