AP30G40GEO-HF Datasheet (Advanced Power Electronics) - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP30G40GEO-HF, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp.

AP30G40GEO-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25oC1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.0V Maximum Power Dissipation Storage Temperature Range Junction Tempe