AP30G40GEO-HF Datasheet - Advanced Power Electronics

AP30G40GEO-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics Corp. AP30G40GEO-HF Halogen-Free Product N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ ICP=150A @VGE=3.0V ▼ Low Gate Drive ▼ Strobe Flash Applications ▼ RoHS Compliant & Halogen-Free C C C C TSSOP-8 G E E E VCE ICP G 400V 150A C E Absolute Maximum Ratings Symbol Parameter VCE VGEP ICP PD@TA=25oC1 TSTG TJ Collector-Emitter Voltage Peak Gate-Emitter Voltage Pulsed Collector Current, VGE @ 3.0V Maximum Power Dissipation Storage Temperature Range Junction Tempe.

AP30G40GEO-HF Datasheet (50.68 KB)

AP30G40GEO-HF Datasheet Preview — Preview of AP30G40GEO-HF PDF

Datasheet Details

Part number:

AP30G40GEO-HF

Manufacturer:

Advanced Power Electronics

File Size:

50.68 KB

Description:

N-channel enhancement mode power mosfet.

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AP30G40GEO-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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