Part number:
AP40G120W
Manufacturer:
Advanced Power Electronics
File Size:
90.50 KB
Description:
N-channel insulated gate bipolar transistor.
AP40G120W Datasheet (90.50 KB)
* ▼ Advanced IGBT Technology ▼ Low Saturation Voltage VCE(sat)=3.15V@IC=40A ▼ Industry Standard TO-3P Package G C E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Contin
AP40G120W Datasheet (90.50 KB)
AP40G120W
Advanced Power Electronics
90.50 KB
N-channel insulated gate bipolar transistor.
📁 Related Datasheet
AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET (APM)
AP400-B10 AC Current transducer AP-B10 (LEM)
AP400-B420L AC Current transducer AP-B420L (LEM)
AP4002H N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP4002H-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP4002H-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP4002I-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP4002J N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP4002J-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
AP4002J-HF-3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET (Advanced Power Electronics)
