AP40G03NF Datasheet - APM

AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET

AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET The AP40G03NF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea.

AP40G03NF Features

* VDS = 30V ID =42A RDS(ON) < 10mΩ @ VGS=10V （Type：6.5mΩ） Only VDS = -30V ID =-38A RDS(ON) < 13mΩ @ VGS=-10V （Type：9.0mΩ） Use Application Wireless charging Boost driver times Brushless motor ng Package Marking and Ordering Information e Product ID Pack Marking h AP40G03NF PDFN5

* 6-8L A

AP40G03NF-APM.pdf