AP6679M Datasheet - Advanced Power Electronics

AP6679M, P-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP6679M Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Characteristic D D D D P-CHANNEL ENHANCEMEN.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

Applications

* and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -30 ± 25 -14 -8.9 -50 2.5 0.02 -

AP6679M-AdvancedPowerElectronics.pdf