AP9912H N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP9912H/J Advanced Power Electronics Corp.▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast www.DataSheet4U.com Switching G S D N-CHANNEL ENHANCE.
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and.

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Datasheet Specifications

Part number: AP9912H
Manufacturer: Advanced Power Electronics
File Size: 118.62 KB
Datasheet: AP9912H_AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9912J) are available for low-profile applications. GD S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=100℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate

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AP9912H N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

Advanced Power Electronics AP9912H-like datasheet