AP9965GEH Datasheet - Advanced Power Electronics

AP9965GEH, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9965GEH/J RoHS-compliant Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G .
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9965GEJ) are available for low-profile applications. G
* D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Sourc

AP9965GEH-AdvancedPowerElectronics.pdf