AP9972AGI N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Advanced Power Electronics

Description

AP9972AGI RoHS-compliant Product Advanced Power Electronics Corp.▼ Low Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Performance G S D N-.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

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Datasheet Specifications

Part number: AP9972AGI
Manufacturer: Advanced Power Electronics
File Size: 91.96 KB
Datasheet: AP9972AGI-AdvancedPowerElectronics.pdf
Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 60 +20 32 20.3 120 31.3 -55 to 150 -55 to

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AP9972AGI N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics

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