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AP9998GS-HF Datasheet - Advanced Power Electronics

AP9998GS-HF, N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9998GS-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ Single Drive Requirement ▼ Fast Switching Characteristic ▼ Ro.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.
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AP9998GS-HF_AdvancedPowerElectronics.pdf

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Datasheet Details

Part number:

AP9998GS-HF

Manufacturer:

Advanced Power Electronics

File Size:

79.50 KB

Description:

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Applications

* and suited for switching power applications. GD S TO-263(S) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current

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