AP9997GK Datasheet - VBsemi

AP9997GK, N-Channel 100V MOSFET

AP9997GK-VB AP9997GK-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.100 at VGS = 10 V 100 0.120 a.

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFETs
* 175 °C Maximum Junction Temperature
* Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s

AP9997GK-VBsemi.pdf