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APT1001RBN Datasheet - Advanced Power Technology

APT1001RBN MOSFET

D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. APT 1001RBN UNIT Volts Amps 1000 11 44 ± 30 310 2.48 -55 to 150 300 Continuous Drain Current @ TC = 25°C Pulsed Drain Current Gate-Source Voltage Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating an.

APT1001RBN Datasheet (50.79 KB)

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Datasheet Details

Part number:

APT1001RBN

Manufacturer:

Advanced Power Technology

File Size:

50.79 KB

Description:

Mosfet.

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APT1001RBN MOSFET Advanced Power Technology

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