* Power MOS V® FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic diode - Avalanche energy rated - Very rugged
* Kelvin source for easy drive
* Very low stray inductance Symmetrical design
* Internal thermistor for temperature m
APTM10HM19FT3 Datasheet (336.14 KB)
APTM10HM19FT3
Advanced Power Technology
336.14 KB
Mosfet power module.
APTM10HM19FT3 Full - Bridge MOSFET Power Module 13 14 Q1 Q3 VDSS = 100V RDSon = 19mΩ typ @ Tj = 25°C ID = 70A @ Tc = 25°C Application Weldi.
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