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MS1003

RF & MICROWAVE TRANSISTORS

MS1003 Features

* 175 MHz 12.5 VOLTS POUT = 100 WATTS GP = 6.0 dB MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high

MS1003 General Description

The MS1003 is a 12.5 V Class C epitaxial silicon NPN transistor designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and efficiency over the 136-175 MHz band. .

MS1003 Datasheet (114.05 KB)

Preview of MS1003 PDF

Datasheet Details

Part number:

MS1003

Manufacturer:

Advanced Power Technology

File Size:

114.05 KB

Description:

Rf & microwave transistors.
140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1003 www.datasheet4u.com RF & MICROWAVE TRANSISTORS VH.

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MS1003 MICROWAVE TRANSISTORS Advanced Power Technology

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