1N415E SILICON MIXER DIODE

Advanced Semiconductor

Description

1N415E SILICON MIXER DIODE .
The ASI 1N415E is a Silicon Mixer Diode Designed for Applications Operating From 8. High bur.

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Datasheet Specifications

Part number: 1N415E
Manufacturer: Advanced Semiconductor
File Size: 15.94 KB
Datasheet: 1N415E_AdvancedSemiconductor.pdf
Description: SILICON MIXER DIODE

Features

* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 °C TEST CONDITIONS F =

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📁 Related Datasheet

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1N415E SILICON MIXER DIODE Advanced Semiconductor

Advanced Semiconductor 1N415E-like datasheet

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