Part number:
1N415E
Manufacturer:
Advanced Semiconductor
File Size:
15.94 KB
Description:
Silicon mixer diode.
* High burnout resistance
* Low noise figure
* Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG 20 mA 1.0 V 2.0 (ERGS) @ TC = 25 °C -55 °C to +150 °C -55 °C to +150 °C NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 °C TEST CONDITIONS F =
1N415E
Advanced Semiconductor
15.94 KB
Silicon mixer diode.
📁 Related Datasheet
1N4150 Small Signal Fast Switching Diodes (Vishay Telefunken)
1N4150 Silicon Planar Diodes (Diotec Semiconductor)
1N4150 HIGH SPEED SWITCHING DIODE (EIC)
1N4150-1 SWITCHING DIODES (Compensated Deuices Incorporated)
1N4150-1 Silicon Switching Diode (MA-COM)
1N4150-1 SWITCHING DIODE (Microsemi)
1N4150-1 Silicon Switching Diodes (Aeroflex)
1N4150UR-1 SWITCHING DIODE (Compensated Deuices Incorporated)
1N4150UR-1 SWITCHING DIODE (Microsemi)
1N4150W Small Signal Fast Switching Diode (Vishay)