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AP0904GJB-HF N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP0904GJB-HF Description

AP0904GJB-HF Halogen-Free Product Advanced Power Electronics Corp.▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ R.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on. resistanc.

AP0904GJB-HF Applications

* without lead-cutted. G D S TO-251S(JB) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 40 +20 51 32 200 44.

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
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