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AP09N50I N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP09N50I Description

AP09N50I RoHS-compliant Product Advanced Power Electronics Corp.▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N-.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost.

AP09N50I Applications

* G D S TO-220CFM(I) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ EAS TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 500 +30 9 5.6 36 36.8 2 Units V V A

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Datasheet Details

Part number
AP09N50I
Manufacturer
Advanced Power Electronics
File Size
88.16 KB
Datasheet
AP09N50I_AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP09N50I-like datasheet