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AP2R803GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP2R803GH Description

AP2R803GH RoHS-compliant Product Advanced Power Electronics Corp.▼ Low On-resistance ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G N.
Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cos.

AP2R803GH Applications

* and suited for low voltage applications such as DC/DC converters. G
* D S TO-252(H) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Curren

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Datasheet Details

Part number
AP2R803GH
Manufacturer
Advanced Power Electronics
File Size
88.78 KB
Datasheet
AP2R803GH-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP2R803GH-like datasheet