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AP40G120W N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

AP40G120W Description

Advanced Power Electronics Corp..

AP40G120W Features

* ▼ Advanced IGBT Technology ▼ Low Saturation Voltage VCE(sat)=3.15V@IC=40A ▼ Industry Standard TO-3P Package G C E Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25℃ IC@TC=100℃ ICM PD@TC=25℃ TSTG TJ TL Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current Contin

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Datasheet Details

Part number
AP40G120W
Manufacturer
Advanced Power Electronics
File Size
90.50 KB
Datasheet
AP40G120W-AdvancedPowerElectronics.pdf
Description
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Advanced Power Electronics
Advanced Power Electronics AP40G120W-like datasheet