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AP9412GJ, AP9412GH N-CHANNEL ENHANCEMENT MODE POWER MOSFET

AP9412GJ Description

AP9412GH/J RoHS-compliant Product Advanced Power Electronics Corp.▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G .
The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low. on-resi.

AP9412GJ Applications

* and suited for low voltage applications such as DC/DC converters. The through-hole version (AP9412GJ) are available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate

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This datasheet PDF includes multiple part numbers: AP9412GJ, AP9412GH. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AP9412GJ, AP9412GH
Manufacturer
Advanced Power Electronics
File Size
61.17 KB
Datasheet
AP9412GH-AdvancedPowerElectronics.pdf
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Note
This datasheet PDF includes multiple part numbers: AP9412GJ, AP9412GH.
Please refer to the document for exact specifications by model.

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📌 All Tags

N-CHANNEL ENHANCEMENT MODE POWER MOSFET Advanced Power Electronics
Advanced Power Electronics AP9412GJ-like datasheet