AM2305 Datasheet, Mode, AiT Semiconductor

AM2305 Features

• Mode
• -30V/-4A, RDS(ON) = 55mΩ@VGS = -10V -30V/-3A, RDS(ON) = 64mΩ@VGS = -4.5V -30V/-2A, RDS(ON) = 85mΩ@VGS = -2.5V Super high density cell design for

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AM2305

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AiT Semiconductor

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📄 Datasheet

Description:

Mosfet -30v p-channel enhancement mode. The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench

AM2305 Application

• Applications devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of t

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AM2305

AiT Semiconductor

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