AM2306 -30V N-CHANNEL ENHANCEMENT MODE MOSFET

AiT Semiconductor

Description

AiT Semiconductor Inc.www.ait-ic.com AM2306 -30V N-CHANNEL ENHANCEMENT MODE MOSFET .
The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

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Datasheet Specifications

Part number: AM2306
Manufacturer: AiT Semiconductor
File Size: 433.88 KB
Datasheet: AM2306-AiTSemiconductor.pdf
Description: -30V N-CHANNEL ENHANCEMENT MODE MOSFET

Features

* -30V/3.6A, RDS(ON)= 45mΩ(typ. )@VGS= 10V
* 30V/2.8A, RDS(ON)= 55mΩ(typ. )@VGS= 4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and Maximum DC current capability

Applications

* devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associate

AM2306 Distributors

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AM2306 -30V N-CHANNEL ENHANCEMENT MODE MOSFET AiT Semiconductor

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