AM2306 Datasheet (AiT Semiconductor) - -30V N-CHANNEL ENHANCEMENT MODE MOSFET

AM2306, -30V N-CHANNEL ENHANCEMENT MODE MOSFET

The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

Advanced trench technology to provide excellent RDS(ON).

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for l

AM2306 Features

* -30V/3.6A, RDS(ON)= 45mΩ(typ.)@VGS= 10V

* 30V/2.8A, RDS(ON)= 55mΩ(typ.)@VGS= 4.5V

* Super high density cell design for extremely low RDS(ON)

* Exceptional on-resistance and Maximum DC current capability

* Available in a SOT-23 package. APPLICATION

* Power Management in Note