Datasheet4U Logo Datasheet4U.com

AM2306 - -30V N-CHANNEL ENHANCEMENT MODE MOSFET

AM2306 Product details

Description

The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density..

Features

  • -30V/3.6A, RDS(ON)= 45mΩ(typ. )@VGS= 10V.
  • 30V/2.8A, RDS(ON)= 55mΩ(typ. )@VGS= 4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and Maximum DC current capability.
  • Available in a SOT-23 package.

📥 Download Datasheet

Preview of AM2306 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
AM2306
Manufacturer
AiT Semiconductor
File Size
433.88 KB
Datasheet
AM2306-AiTSemiconductor.pdf
Description
-30V N-CHANNEL ENHANCEMENT MODE MOSFET

📁 Related Datasheet

  • AM2306N - N-Channel MOSFET (Analog Power)
  • AM2306NE - N-Channel MOSFET (Analog Power)
  • AM2300 - N-Channel Enhancement Mode MOSFET (AXElite)
  • AM2300N - N-Channel MOSFET (Analog Power)
  • AM2301 - Digital temperature and humidity sensor (Aosong)
  • AM2301P - P-Channel MOSFET (Analog Power)
  • AM2301PE - P-Channel 20-V (D-S) MOSFET (Analog Power)
  • AM2302 - Digital temperature and humidity sensor (Aosong)

📌 All Tags

-30V N-CHANNEL ENHANCEMENT MODE MOSFET AiT Semiconductor
AiT Semiconductor AM2306-like datasheet

AM2306 Stock/Price