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AM2306 - -30V N-CHANNEL ENHANCEMENT MODE MOSFET

AM2306 Description

AiT Semiconductor Inc.www.ait-ic.com AM2306 -30V N-CHANNEL ENHANCEMENT MODE MOSFET .
The AM2306 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density.

AM2306 Features

* -30V/3.6A, RDS(ON)= 45mΩ(typ. )@VGS= 10V
* 30V/2.8A, RDS(ON)= 55mΩ(typ. )@VGS= 4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and Maximum DC current capability

AM2306 Applications

* devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associate

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Datasheet Details

Part number
AM2306
Manufacturer
AiT Semiconductor
File Size
433.88 KB
Datasheet
AM2306-AiTSemiconductor.pdf
Description
-30V N-CHANNEL ENHANCEMENT MODE MOSFET

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📌 All Tags

-30V N-CHANNEL ENHANCEMENT MODE MOSFET AiT Semiconductor
AiT Semiconductor AM2306-like datasheet