AFC6332 Datasheet - Alfa-MOS

AFC6332 N&P-Channel MOSFET

AFC6332, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFC6332 Features

* N-Channel 20V/1.0A,RDS(ON)=280mΩ@VGS=4.5V 20V/0.8A,RDS(ON)=340mΩ@VGS=2.5V 20V/0.7A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 600 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 840 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1440 mΩ@ VGS =-1.8V Low-Voltage Operation High-Speed Circuits Low Battery Voltage O

AFC6332 Datasheet (1.07 MB)