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AFC6610W, AFC6610W-Alfa 100V N&P-Channel MOSFET

AFC6610W Description

Alfa-MOS Technology AFC6610W 100V N & P Pair Enhancement Mode MOSFET General .
AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

AFC6610W Features

* N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V
* P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

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This datasheet PDF includes multiple part numbers: AFC6610W, AFC6610W-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFC6610W, AFC6610W-Alfa
Manufacturer
Alfa-MOS
File Size
819.34 KB
Datasheet
AFC6610W-Alfa-MOS.pdf
Description
100V N&P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFC6610W, AFC6610W-Alfa.
Please refer to the document for exact specifications by model.

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100V N &P-Channel MOSFET Alfa-MOS
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