AFC6610W Datasheet - Alfa-MOS

100V N&P-Channel MOSFET

AFC6610W Features

* N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V

* P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

AFC6610W General Description

AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFC6610W Datasheet (819.34 KB)

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AFC6610W

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Alfa-MOS

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819.34 KB

Description:

100v n&p-channel mosfet.

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AFC6610W 100V N &P-Channel MOSFET Alfa-MOS

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AFC6610W Features

AFC6610W General Description

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