Description
Alfa-MOS Technology AFC6610W 100V N & P Pair Enhancement Mode MOSFET General .
AFC6610W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Features
* N-Channel 100V/2.3A,RDS(ON)=310mΩ@VGS=10V 100V/1.8A,RDS(ON)=320mΩ@VGS=4.5V
* P-Channel -100V/-1.0A,RDS(ON)=650mΩ@VGS=-10V -100V/-0.5A,RDS(ON)=700mΩ@VGS=-4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current
capability