AFC6601, AFC6601-Alfa - N&P-Channel MOSFET

Alfa-MOS

Datasheet Details

Part number	AFC6601, AFC6601-Alfa
Manufacturer	Alfa-MOS
File Size	659.26 KB
Description	N&P-Channel MOSFET
Datasheet	AFC6601-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFC6601, AFC6601-Alfa. Please refer to the document for exact specifications by model.

AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V.
P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
TSOP-6 package design Pin.

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Published: Dec 1, 2018 |