AFC6601

N&P-Channel MOSFET

Alfa-MOS

AFC6601 Features

* N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V

* P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.5V

* Super high density cell design for extremely low RDS (ON)

AFC6601 General Description

AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. AFC6601 30V .

AFC6601 Datasheet (659.26 KB)

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AFC6601 Datasheet Preview — Preview of AFC6601 PDF

Datasheet Details

Part number:

AFC6601

Manufacturer:

Alfa-MOS

File Size:

659.26 KB

Description:

N&p-channel mosfet.

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AFC6601 N &P-Channel MOSFET Alfa-MOS

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AFC6601 Features

AFC6601 General Description

Datasheet Details

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