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AFC6601, AFC6601-Alfa N&P-Channel MOSFET

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Description

Alfa-MOS Technology General .
AFC6601, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFC6601, AFC6601-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFC6601, AFC6601-Alfa
Manufacturer
Alfa-MOS
File Size
659.26 KB
Datasheet
AFC6601-Alfa-MOS.pdf
Description
N&P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFC6601, AFC6601-Alfa.
Please refer to the document for exact specifications by model.

Features

* N-Channel 30V/3.4A,RDS(ON)=46mΩ@VGS=10V 30V/3.0A,RDS(ON)=58mΩ@VGS=4.5V 30V/2.0A,RDS(ON)=125mΩ@VGS=2.5V
* P-Channel -30V/-2.6A,RDS(ON)=110mΩ@VGS=-10.0V -30V/-2.0A,RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.2A,RDS(ON)=150mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS (ON)

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