Description
Alfa-MOS Technology AFC6332ES 20V N & P Pair Enhancement Mode MOSFET General .
AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
Features
* N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V
P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V
Super high density cell design ESD Protection Diode design