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AFC6332ES Datasheet - Alfa-MOS

N&P-Channel MOSFET

AFC6332ES Features

* N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V Super high density cell design ESD Protection Diode design

AFC6332ES General Description

AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power lo.

AFC6332ES Datasheet (972.08 KB)

Preview of AFC6332ES PDF

Datasheet Details

Part number:

AFC6332ES

Manufacturer:

Alfa-MOS

File Size:

972.08 KB

Description:

N&p-channel mosfet.

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AFC6332ES N &P-Channel MOSFET Alfa-MOS

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