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AFC6332ES, AFC6332ES-Alfa Datasheet - Alfa-MOS

AFC6332ES N&P-Channel MOSFET

AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power lo.

AFC6332ES Features

* N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V Super high density cell design ESD Protection Diode design

AFC6332ES-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFC6332ES, AFC6332ES-Alfa. Please refer to the document for exact specifications by model.
AFC6332ES Datasheet Preview Page 2 AFC6332ES Datasheet Preview Page 3

Datasheet Details

Part number:

AFC6332ES, AFC6332ES-Alfa

Manufacturer:

Alfa-MOS

File Size:

972.08 KB

Description:

N&p-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFC6332ES, AFC6332ES-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFC6332ES AFC6332ES-Alfa N &P-Channel MOSFET Alfa-MOS

AFC6332ES Distributor