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AFC6332ES, AFC6332ES-Alfa N&P-Channel MOSFET

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Description

Alfa-MOS Technology AFC6332ES 20V N & P Pair Enhancement Mode MOSFET General .
AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFC6332ES, AFC6332ES-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFC6332ES, AFC6332ES-Alfa
Manufacturer
Alfa-MOS
File Size
972.08 KB
Datasheet
AFC6332ES-Alfa-MOS.pdf
Description
N&P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFC6332ES, AFC6332ES-Alfa.
Please refer to the document for exact specifications by model.

Features

* N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V Super high density cell design ESD Protection Diode design

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