AFC6332ES, AFC6332ES-Alfa - N&P-Channel MOSFET

Alfa-MOS

Datasheet Details

Part number	AFC6332ES, AFC6332ES-Alfa
Manufacturer	Alfa-MOS
File Size	972.08 KB
Description	N&P-Channel MOSFET
Datasheet	AFC6332ES-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFC6332ES, AFC6332ES-Alfa. Please refer to the document for exact specifications by model.

AFC6332ES, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

N-Channel 20V/0.7A,RDS(ON)=320mΩ@VGS=4.5V 20V/0.6A,RDS(ON)=420mΩ@VGS=2.5V 20V/0.5A,RDS(ON)=580mΩ@VGS=1.8V P-Channel -20V/-0.6A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 780 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 980 mΩ@ VGS =-1.8V Super high density cell design ESD Protection Diode design.
in SOT-363 package design.

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Published: Dec 1, 2018 |