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AFC6606W, AFC6606W-Alfa Datasheet - Alfa-MOS

AFC6606W N&P-Channel MOSFET

AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descript.

AFC6606W Features

* N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design Appl

AFC6606W-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFC6606W, AFC6606W-Alfa. Please refer to the document for exact specifications by model.
AFC6606W Datasheet Preview Page 2 AFC6606W Datasheet Preview Page 3

Datasheet Details

Part number:

AFC6606W, AFC6606W-Alfa

Manufacturer:

Alfa-MOS

File Size:

0.95 MB

Description:

N&p-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFC6606W, AFC6606W-Alfa.
Please refer to the document for exact specifications by model.

AFC6606W Distributor

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TAGS

AFC6606W AFC6606W-Alfa N &P-Channel MOSFET Alfa-MOS