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AFC6606W, AFC6606W-Alfa N&P-Channel MOSFET

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Description

Alfa-MOS Technology AFC6606W 60V N & P Pair Enhancement Mode MOSFET General .
AFC6606W, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

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This datasheet PDF includes multiple part numbers: AFC6606W, AFC6606W-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
AFC6606W, AFC6606W-Alfa
Manufacturer
Alfa-MOS
File Size
0.95 MB
Datasheet
AFC6606W-Alfa-MOS.pdf
Description
N&P-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: AFC6606W, AFC6606W-Alfa.
Please refer to the document for exact specifications by model.

Features

* N-Channel 60V/2.8A,RDS(ON)=135mΩ@VGS=10V 60V/2.0A,RDS(ON)=145mΩ@VGS=4.5V P-Channel -60V/-1.8A,RDS(ON)=310mΩ@VGS=-10V -60V/-1.4A,RDS(ON)=340mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-6L package design Appl

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