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AFN2014, AFN2014-Alfa Datasheet - Alfa-MOS

AFN2014 N-Channel Enhancement Mode MOSFET

AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFN2014 Features

* 20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Application Power Management in Desktop Computer DC/DC Converter LCD Display inverter Pin Define Pin 1 2 3 Symbol G S D O

AFN2014-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFN2014, AFN2014-Alfa. Please refer to the document for exact specifications by model.
AFN2014 Datasheet Preview Page 2 AFN2014 Datasheet Preview Page 3

Datasheet Details

Part number:

AFN2014, AFN2014-Alfa

Manufacturer:

Alfa-MOS

File Size:

834.71 KB

Description:

N-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN2014, AFN2014-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN2014 AFN2014-Alfa N-Channel Enhancement Mode MOSFET Alfa-MOS

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