AFN2014 Datasheet, Mosfet, Alfa-MOS

AFN2014 Features

• Mosfet 20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=17mΩ@VGS=2.5V 20V/ 5A,RDS(ON)=21mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) TO-252-2L package design Applicatio

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Part number:

AFN2014

Manufacturer:

Alfa-MOS

File Size:

834.71kb

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📄 Datasheet

Description:

N-channel enhancement mode mosfet. AFN2014, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devi

AFN2014 Application

• Applications Pin Description ( TO-252-2L ) AFN2014 20V N-Channel Enhancement Mode MOSFET Features 20V/ 10A,RDS(ON)=14mΩ@VGS=4.5V 20V/ 8A,RDS(ON)=1

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AFN2014

Alfa-MOS

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