AFN2306AE Datasheet - Alfa-MOS

AFN2306AE N-Channel MOSFET

AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN2306AE Features

* 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design Application Direct Logic-Level Interface: TTL/CMO

AFN2306AE Datasheet (721.20 KB)