Datasheet Details
Part number:
AFN2306AE, AFN2306AE-Alfa
Manufacturer:
Alfa-MOS
File Size:
721.20 KB
Description:
N-channel mosfet.
Note:
This datasheet PDF includes multiple part numbers: AFN2306AE, AFN2306AE-Alfa.
Please refer to the document for exact specifications by model.
AFN2306AE, AFN2306AE-Alfa, N-Channel MOSFET
AFN2306AE, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los
AFN2306AE Features
* 20V/1.8A,RDS(ON)=280mΩ@VGS=4.5V 20V/1.5A,RDS(ON)=340mΩ@VGS=2.5V 20V/1.2A,RDS(ON)=750mΩ@VGS=1.8V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability ESD Protected SOT-23 package design Application Direct Logic-Level Interface: TTL/CMO
📁 Related Datasheet
📌 All Tags
