AFN2312A, AFN2312A-Alfa Datasheet - Alfa-MOS

AFN2312A 20V N-Channel Enhancement Mode MOSFET

AFN2312A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFN2312A Features

* ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V

* ID=3.0A,RDS(ON)=34mΩ@VGS=2.5V

* ID=2.0A,RDS(ON)=50mΩ@VGS=1.8V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design Application

* Portable Equipm

AFN2312A-Alfa-MOS.pdf

AFN2312A Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN2312A, AFN2312A-Alfa. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AFN2312A, AFN2312A-Alfa

Manufacturer:

Alfa-MOS

File Size:

700.43 KB

Description:

20v n-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFN2312A, AFN2312A-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFN2312A AFN2312A-Alfa 20V N-Channel Enhancement Mode MOSFET Alfa-MOS

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