AFN2312A Datasheet, Mosfet, Alfa-MOS

AFN2312A Features

• Mosfet
• ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V
• ID=3.0A,RDS(ON)=34mΩ@VGS=2.5V
• ID=2.0A,RDS(ON)=50mΩ@VGS=1.8V
• Super high density cell design for extremely low RDS (O

PDF File Details

Part number:

AFN2312A

Manufacturer:

Alfa-MOS

File Size:

700.43kb

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📄 Datasheet

Description:

20v n-channel enhancement mode mosfet. AFN2312A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These dev

AFN2312A Application

• Applications Pin Description ( SOT-23 ) AFN2312A 20V N-Channel Enhancement Mode MOSFET Features
• ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V

TAGS

AFN2312A

Alfa-MOS

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