AFN2312A, AFN2312A-Alfa 20V N-Channel Enhancement Mode MOSFET

Alfa-MOS

Description

Alfa-MOS Technology General .
AFN2312A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

📥 Download Datasheet

AFN2312A Datasheet Preview — This datasheet PDF includes multiple part numbers: AFN2312A, AFN2312A-Alfa. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: AFN2312A, AFN2312A-Alfa
Manufacturer: Alfa-MOS
File Size: 700.43 KB
Datasheet: AFN2312A-Alfa-MOS.pdf
Description: 20V N-Channel Enhancement Mode MOSFET
Note: This datasheet PDF includes multiple part numbers: AFN2312A, AFN2312A-Alfa.
Please refer to the document for exact specifications by model.

Features

* ID=4.0A,RDS(ON)=25mΩ@VGS=4.5V
* ID=3.0A,RDS(ON)=34mΩ@VGS=2.5V
* ID=2.0A,RDS(ON)=50mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability

AFN2312A Distributors

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AFN2312A-Alfa 20V N-Channel Enhancement Mode MOSFET Alfa-MOS

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