Datasheet Details
Part number:
AFN2330, AFN2330-Alfa
Manufacturer:
Alfa-MOS
File Size:
546.06 KB
Description:
N-channel enhancement mode mosfet.
Note:
This datasheet PDF includes multiple part numbers: AFN2330, AFN2330-Alfa.
Please refer to the document for exact specifications by model.
AFN2330, AFN2330-Alfa, N-Channel Enhancement Mode MOSFET
AFN2330, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
AFN2330 Features
* 90V/2.8A,RDS(ON)=190mΩ@VGS=10V 90V/2.0A,RDS(ON)=200mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23-3L package design Application DC/DC Converters Load Switch LED Backlighting in LCD TVs Pin Define Pin 1 2 3
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