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AFN2336BA Datasheet - Alfa-MOS

AFN2336BA N-Channel MOSFET

AFN2336BA, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN2336BA Features

* 30V/1.8A,RDS(ON)=480mΩ@VGS=10V 30V/1.5A,RDS(ON)=580mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-23 package design Application Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers Ba

AFN2336BA Datasheet (634.11 KB)