AFN2356AS Datasheet - Alfa-MOS

100V N-Channel Enhancement Mode MOSFET

AFN2356AS Features

* 100V/3.6A,RDS(ON)=100mΩ@VGS=10V

* 100V/2.8A,RDS(ON)=125mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design Application

* DC/DC Converters

* Load Switch

* LED B

AFN2356AS General Description

AFN2356AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

AFN2356AS Datasheet (822.64 KB)

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AFN2356AS

Manufacturer:

Alfa-MOS

File Size:

822.64 KB

Description:

100v n-channel enhancement mode mosfet.

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AFN2356AS 100V N-Channel Enhancement Mode MOSFET Alfa-MOS

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AFN2356AS Features

AFN2356AS General Description

Datasheet Details

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